Specification	NTS2101PT1

Current - Continuous Drain (Id) @ 25°C	1.4 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.4 nC
Input Capacitance (Ciss) (Max) @ Vds	640 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max)	290 mW
Rds On (Max) @ Id, Vgs	100 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

NTS2101P Series

Small Signal MOSFET -8V -1.4A 100 mOhm Single P-Channel SC-70

Part	Rds On (Max) @ Id, Vgs	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
ON Semiconductor NTS2101PT1G	100 mOhm	SC-70 SOT-323	6.4 nC	MOSFET (Metal Oxide)	1.4 A	290 mW	1 V	P-Channel	1.8 V 4.5 V	-55 °C	150 °C	8 V	Surface Mount	640 pF	8 V
ON Semiconductor NTS2101PT1	100 mOhm	SC-70 SOT-323	6.4 nC	MOSFET (Metal Oxide)	1.4 A	290 mW	1 V	P-Channel	1.8 V 4.5 V	-55 °C	150 °C	8 V	Surface Mount	640 pF	8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This is an 8.0 V P-Channel Power MOSFET.

Technical documentation and resources