
Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | PN3646 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 300 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 30 |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-226-3, TO-92-3 |
| Power - Max [Max] | 350 mW |
| Supplier Device Package | TO-92-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 5453 | $ 0.06 | |
| 5453 | $ 0.06 | |||
Description
General part information
PN364 Series
Bipolar (BJT) Transistor NPN 15 V 300 mA 350 mW Through Hole TO-92-3
Documents
Technical documentation and resources