Discrete Semiconductor Products

MPS6534

Obsolete

TRANS PNP 40V 0.8A TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PNP 40V 0.8A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	MPS6534

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	90 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Current - Collector Cutoff (Max) [Max]	Mounting Type	Power - Max [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor MPS6534_D75Z	50 nA	Through Hole	625 mW	TO-92-3	90 hFE	800 mA	TO-226-3 TO-92-3	40 V	PNP	-55 °C	150 °C
ON Semiconductor MPS6531_D26Z	50 nA	Through Hole	625 mW	TO-92-3	90 hFE	1 A	TO-226-3 TO-92-3	40 V	NPN	-55 °C	150 °C
ON Semiconductor MPS6534_D26Z	50 nA	Through Hole	625 mW	TO-92-3	90 hFE	800 mA	TO-226-3 TO-92-3	40 V	PNP	-55 °C	150 °C
ON Semiconductor MPS6534	50 nA	Through Hole	625 mW	TO-92-3	90 hFE	800 mA	TO-226-3 TO-92-3	40 V	PNP	-55 °C	150 °C
ON Semiconductor MPS6534	50 nA	Through Hole	625 mW	TO-92-3	90 hFE	800 mA	TO-226-3 TO-92-3	40 V	PNP	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 40 V 800 mA 625 mW Through Hole TO-92-3

Technical documentation and resources