Specification	NVHL095N65S3F

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3020 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	272 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	95 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

NVHL095N65S3F Series

SUPERFET III MOSFET, 36A, 95mΩ, 650V in TO-247

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)	Grade	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NVHL095N65S3F	N-Channel	36 A	-55 °C	150 °C	Through Hole	30 V	Automotive	95 mOhm	3020 pF	TO-247-3	5 V	650 V	TO-247-3	AEC-Q101	10 V	272 W	MOSFET (Metal Oxide)	66 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.84
		30	$ 5.46
		120	$ 4.88
		510	$ 4.31
		1020	$ 3.88
		2010	$ 3.63
Newark	Each	250	$ 3.99
		250	$ 3.99
		500	$ 3.87
		500	$ 3.87
ON Semiconductor	N/A	1	$ 3.27

Description

General part information

NVHL095N65S3F Series

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability