Specification	NTP5411NG

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Input Capacitance (Ciss) (Max) @ Vds	4500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	166 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTP5411N Series

60 V, 80 A, 10 mOhm Single N-Channel Power MOSFET, TO-220

Part	Supplier Device Package	Vgs (Max)	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
ON Semiconductor NTP5411NG	TO-220	20 V	166 W	60 V	Through Hole	130 nC	-55 °C	175 ░C	MOSFET (Metal Oxide)	10 mOhm	10 V	TO-220-3	N-Channel	4500 pF	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTP5411N Series

The NTD/NTB/NTP54xxN series of advanced planar 60 V N-Channel Power MOSFETs is ideal for use in DC motor drives, LED drivers, power supplies, converters, pulse width modulation (PWM) controls and bridge circuits, where diode speed and commutating safe operating areas are crucial and benefit from an additional safety margin against unexpected voltage transients that these devices provide.

Documents

Technical documentation and resources

Datasheet

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing