Discrete Semiconductor Products

RF4L055GNTCR

NRND

MOSFET N-CH 60V 5.5A HUML2020L8

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Discrete Semiconductor Products

NRND

MOSFET N-CH 60V 5.5A HUML2020L8

Technical Specifications

Parameters and characteristics for this part

Specification	RF4L055GNTCR

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerUDFN
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	43 mOhm
Supplier Device Package	HUML2020L8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Technology	Operating Temperature
Rohm Semiconductor RF4L055GNTCR	N-Channel	HUML2020L8	7.8 nC	8-PowerUDFN	60 V	2 W	400 pF	43 mOhm	2.7 V	4.5 V 10 V	5.5 A	Surface Mount	20 V	MOSFET (Metal Oxide)	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 5.5A (Ta) 2W (Ta) Surface Mount HUML2020L8

Technical documentation and resources

No documents available