BUK7M11-40HX

Active

MOSFET N-CH 40V 35A LFPAK33

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 40V 35A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7M11-40HX

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1022 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	50 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	3.6 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Qualification	Power Dissipation (Max) [Max]	Supplier Device Package	Mounting Type	Technology	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP BUK7M11-40HX	11 mOhm	35 A	-55 °C	175 ░C	40 V	3.6 V	1022 pF	10 V	N-Channel	20 V	-10 V	AEC-Q101	50 W	LFPAK33	Surface Mount	MOSFET (Metal Oxide)	Automotive	16 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 35A (Tc) 50W (Tc) Surface Mount LFPAK33

Technical documentation and resources