Discrete Semiconductor Products

UPA2790GR-E1-AT

Obsolete

SWITCHING N-CHANNEL POWER MOSFET

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Discrete Semiconductor Products

Obsolete

SWITCHING N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2790GR-E1-AT

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	12.6 nC, 11 nC
Input Capacitance (Ciss) (Max) @ Vds	500 pF, 460 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC (0.173", 4.40mm Width)
Power - Max	1.7 W
Rds On (Max) @ Id, Vgs	60 mOhm, 28 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Configuration	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature	Power - Max	Gate Charge (Qg) (Max) @ Vgs
Renesas Electronics Corporation UPA2790GR-E2-A
Renesas Electronics Corporation UPA2790GR-E1-A
Renesas Electronics Corporation UPA2790GR-E1-AT	N and P-Channel	8-SOIC (0.173" 4.40mm Width)	6 A	460 pF 500 pF	Surface Mount	MOSFET (Metal Oxide)	8-SOP	30 V	28 mOhm 60 mOhm	2.5 V	150 °C	1.7 W	11 nC 12.6 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 6A (Ta) 1.7W (Ta) Surface Mount 8-SOP

Technical documentation and resources