MMBT3906SL

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PNP EPITAXIAL SILICON TRANSISTOR

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Discrete Semiconductor Products

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PNP EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	MMBT3906SL

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-923F
Power - Max [Max]	227 mW
Supplier Device Package	SOT-923F
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

PNP Epitaxial Silicon Transistor

Part	Current - Collector Cutoff (Max) [Max]	Package / Case	Operating Temperature	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Power - Max [Max]	Transistor Type
ON Semiconductor MMBT3906SL	50 nA	SOT-923F	150 °C	250 MHz	200 mA	400 mV	100	SOT-923F	40 V	Surface Mount	227 mW	PNP
ON Semiconductor MMBT3906SL	50 nA	SOT-923F	150 °C	250 MHz	200 mA	400 mV	100	SOT-923F	40 V	Surface Mount	227 mW	PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources