Discrete Semiconductor Products

MJ11028G

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50 A, 60 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR

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Discrete Semiconductor Products

Active

50 A, 60 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	MJ11028G

Current - Collector (Ic) (Max)	50 A
Current - Collector Cutoff (Max)	2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	1000
Mounting Type	Through Hole
Operating Temperature [Max]	200 C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	300 W
Supplier Device Package	TO-204
Supplier Device Package	TO-3
Vce Saturation (Max) @ Ib, Ic	3.5 V
Voltage - Collector Emitter Breakdown (Max)	60 V

50 A, 60 V NPN Darlington Bipolar Power Transistor

Part	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Supplier Device Package	Current - Collector Cutoff (Max)	Power - Max [Max]	Current - Collector (Ic) (Max)
ON Semiconductor MJ11028G	60 V	-55 °C	200 C	1000	Through Hole	3.5 V	TO-204	TO-3	2 mA	300 W	50 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

These Bipolar Power Darlington Transistors are for use as output devices in complementary general purpose amplifier applications.

Technical documentation and resources