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MMBT2222AWT1G
Discrete Semiconductor Products

NTS4101PT1G

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 20 V, 1.37 A, 0.12 OHM, SOT-323, SURFACE MOUNT

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MMBT2222AWT1G
Discrete Semiconductor Products

NTS4101PT1G

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 20 V, 1.37 A, 0.12 OHM, SOT-323, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationNTS4101PT1G
Current - Continuous Drain (Id) @ 25°C1.37 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]840 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-70, SOT-323
Power Dissipation (Max) [Max]329 mW
Rds On (Max) @ Id, Vgs120 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.40
10$ 0.24
100$ 0.15
500$ 0.12
1000$ 0.10
Digi-Reel® 1$ 0.40
10$ 0.24
100$ 0.15
500$ 0.12
1000$ 0.10
Tape & Reel (TR) 3000$ 0.09
6000$ 0.08
9000$ 0.07
15000$ 0.07
21000$ 0.07
30000$ 0.06
75000$ 0.06
150000$ 0.06
NewarkEach (Supplied on Full Reel) 3000$ 0.11
6000$ 0.10
12000$ 0.10
18000$ 0.10
30000$ 0.09
ON SemiconductorN/A 1$ 0.06

Description

General part information

NTS4101P Series

This is a 20 V P-Channel Power MOSFET.