Specification	KSC1815YTA

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	400 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

KSC1815 Series

NPN Epitaxial Silicon Transistor

Part	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Mounting Type	Transistor Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor KSC1815YTA	150 °C	250 mV	TO-226-3 TO-92-3	70 hFE	100 nA	50 V	400 mW	Through Hole	NPN	TO-92-3	150 mA
ON Semiconductor KSC1815GRBU	150 °C	250 mV	TO-226-3 TO-92-3		100 nA	50 V	400 mW	Through Hole	NPN	TO-92-3	150 mA	200 hFE
ON Semiconductor KSC1815YBU	150 °C	250 mV	TO-226-3 TO-92-3	120	100 nA	50 V	400 mW	Through Hole	NPN	TO-92-3	150 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources