FQA40N25
ActivePOWER MOSFET, N CHANNEL, 250 V, 40 A, 0.051 OHM, TO-3PN, THROUGH HOLE
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FQA40N25
ActivePOWER MOSFET, N CHANNEL, 250 V, 40 A, 0.051 OHM, TO-3PN, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | FQA40N25 |
|---|---|
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 110 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Rds On (Max) @ Id, Vgs | 70 mOhm |
| Supplier Device Package | TO-3PN |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
FQA40 Series
The FQA40N25 is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
Documents
Technical documentation and resources