Discrete Semiconductor Products

BUK6Y14-40PX

Active

MOSFET P-CH 40V 64A LFPAK56

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 40V 64A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	BUK6Y14-40PX

Current - Continuous Drain (Id) @ 25°C	64 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	110 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Grade	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology
Freescale Semiconductor - NXP BUK6Y14-40PX	LFPAK56 Power-SO8	64 nC	AEC-Q101	20 V	SC-100 SOT-669	3 V	14 mOhm	Surface Mount	-55 °C	175 ░C	P-Channel	64 A	110 W	40 V	Automotive	2300 pF	4.5 V 10 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 40 V 64A (Tc) 110W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources