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PowerDI5060 UX
Discrete Semiconductor Products

DMTH15H017LPSW-13

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 150V, 0.0255OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

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PowerDI5060 UX
Discrete Semiconductor Products

DMTH15H017LPSW-13

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 150V, 0.0255OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH15H017LPSW-13
Current - Continuous Drain (Id) @ 25°C50 A, 8 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]50 nC
Input Capacitance (Ciss) (Max) @ Vds3369 pF
Mounting TypeWettable Flank, Surface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)107 W, 1.5 W
Rds On (Max) @ Id, Vgs17.5 mOhm
Supplier Device PackagePowerDI5060-8 (Type UX)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.62
10$ 1.34
100$ 1.07
500$ 0.91
1000$ 0.77
Digi-Reel® 1$ 1.62
10$ 1.34
100$ 1.07
500$ 0.91
1000$ 0.77
Tape & Reel (TR) 2500$ 0.71
5000$ 0.70

Description

General part information

DMTH15H017LPSWQ Series

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.

Documents

Technical documentation and resources