Discrete Semiconductor Products

V10KM120DUHM3/H

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10A,120V,FLATPAK5X6,PARALLEL DUAL

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Discrete Semiconductor Products

Active

10A,120V,FLATPAK5X6,PARALLEL DUAL

Technical Specifications

Parameters and characteristics for this part

Specification	V10KM120DUHM3/H

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	350 çA
Diode Configuration	2 Independent
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	8-PowerTDFN
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	FlatPAK 5x6 (Dual)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	120 V
Voltage - Forward (Vf) (Max) @ If [Max]	890 mV

Part	Speed	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Mounting Type	Qualification	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Diode Configuration
Vishay General Semiconductor - Diodes Division V10KM120DUHM3/H	200 mA 500 ns	Automotive	120 V	8-PowerTDFN	FlatPAK 5x6 (Dual)	890 mV	175 ░C	-40 °C	Schottky	Surface Mount	AEC-Q101	350 çA	10 A	2 Independent
Vishay General Semiconductor - Diodes Division V10KM120DU-M3/H	200 mA 500 ns		120 V	8-PowerTDFN	FlatPAK 5x6 (Dual)	890 mV	175 ░C	-40 °C	Schottky	Surface Mount		350 çA	10 A	2 Independent
Vishay General Semiconductor - Diodes Division V10KM120DU-M3/I	200 mA 500 ns		120 V	8-PowerTDFN	FlatPAK 5x6 (Dual)	890 mV	175 ░C	-40 °C	Schottky	Surface Mount		350 çA	10 A	2 Independent

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General part information

Diode Array 2 Independent 120 V 10A Surface Mount 8-PowerTDFN

Technical documentation and resources