Discrete Semiconductor Products

2N6517RLRA

Obsolete

ON Semiconductor

HIGH VOLTAGE TRANSISTORS

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Discrete Semiconductor Products

2N6517RLRA

Obsolete

ON Semiconductor

HIGH VOLTAGE TRANSISTORS

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DocumentsDatasheet Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2N6517RLRA

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	350 V

2N6517%20(LEGACY%20FAIRCHILD) Series

500 mA High Voltage Bipolar Junction Transistors

Part	Package / Case	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Power - Max [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature
ON Semiconductor 2N6517RLRAG	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	TO-92	TO-226	Through Hole	350 V	500 mA	NPN	625 mW	200 MHz	1 V	20	-55 °C	150 °C
ON Semiconductor 2N6517CBU	TO-226-3 TO-92-3	50 nA	TO-92-3		Through Hole		500 mA	NPN	625 mW	200 MHz	1 V	20			400 V	150 °C
ON Semiconductor 2N6517TA	TO-226-3 TO-92-3	50 nA	TO-92-3		Through Hole	350 V	500 mA	NPN	625 mW	200 MHz	1 V	20				150 °C
ON Semiconductor 2N6517RLRA	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	TO-92	TO-226	Through Hole	350 V	500 mA	NPN	625 mW	200 MHz	1 V	20	-55 °C	150 °C
ON Semiconductor 2N6517RLRP	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	TO-92	TO-226	Through Hole	350 V	500 mA	NPN	625 mW	200 MHz	1 V	20	-55 °C	150 °C
ON Semiconductor 2N6517CTA	TO-226-3 TO-92-3	50 nA	TO-92-3		Through Hole		500 mA	NPN	625 mW	200 MHz	1 V	20			400 V	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

2N6517%20(LEGACY%20FAIRCHILD) Series

The High Voltage PNP Bipolar Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.Replacement active OPN:2N6517 (Legacy Fairchild)https://www.onsemi.com/products/discretes-drivers/general-purpose-and-low-vcesat-transistors/2n6517-legacy-fairchild

Documents

Technical documentation and resources