Discrete Semiconductor Products

SI7620DN-T1-GE3

Obsolete

MOSFET N-CH 150V 13A PPAK1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 150V 13A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7620DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	5.2 W, 3.8 W
Rds On (Max) @ Id, Vgs	126 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Vgs (Max)	Technology	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI7620DN-T1-GE3	-55 °C	150 °C	150 V	126 mOhm	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8	10 V	600 pF	13 A	N-Channel	3.8 W 5.2 W	20 V	MOSFET (Metal Oxide)	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 13A (Tc) 3.8W (Ta), 5.2W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources

No documents available