Discrete Semiconductor Products

VS-65EPF12L-M3

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DIODE GEN PURP 1.2KV 65A TO247AD

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Discrete Semiconductor Products

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DIODE GEN PURP 1.2KV 65A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-65EPF12L-M3

Current - Average Rectified (Io)	65 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	480 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.42 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Technology	Current - Reverse Leakage @ Vr	Speed	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Package / Case	Reverse Recovery Time (trr)	Grade	Qualification
Vishay General Semiconductor - Diodes Division VS-65EPF12L-M3	150 °C	-40 °C	65 A	Standard	100 µA	200 mA 500 ns	TO-247AD	1.2 kV	Through Hole	1.42 V	TO-247-2	480 ns
Vishay General Semiconductor - Diodes Division VS-65EPF12LHM3	150 °C	-40 °C	65 A	Standard	100 µA	200 mA 500 ns	TO-247AD	1.2 kV	Through Hole	1.42 V	TO-247-2	480 ns	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 65A Through Hole TO-247AD

Technical documentation and resources