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Discrete Semiconductor Products

CRD5AS-12B#B00

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Renesas Electronics Corporation

REVERSE CONDUCTING THYRISTOR MEDIUM POWER USE

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MP-3A
Discrete Semiconductor Products

CRD5AS-12B#B00

Unknown
Renesas Electronics Corporation

REVERSE CONDUCTING THYRISTOR MEDIUM POWER USE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationCRD5AS-12B#B00
Current - Gate Trigger (Igt) (Max) [Max]100 µA
Current - Hold (Ih) (Max) [Max]3 mA
Current - Non Rep. Surge 50, 60Hz (Itsm)90 A
Current - Off State (Max) [Max]2 mA
Current - On State (It (AV)) (Max) [Max]5 A
Current - On State (It (RMS)) (Max) [Max]7.8 A
Mounting TypeSurface Mount
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
SCR TypeSensitive Gate
Supplier Device PackageMP-3A
Voltage - Gate Trigger (Vgt) (Max) [Max]800 mV
Voltage - Off State600 V
Voltage - On State (Vtm) (Max) [Max]1.8 V

Pricing

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Description

General part information

CRD5AS-12B Series

The CRD5AS-12B 600V reverse conducting thyristor for medium power offers a 0.8V gate trigger voltage, 0.1mA gate trigger current, an operating temperature range of -40 °C to 125 °C, and can be used for switching mode power supply applications.

Documents

Technical documentation and resources