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Thyristor TRIAC 4A = 5 mA 125 °C (Max) 600 V TO-220FPAB
Discrete Semiconductor Products

NTPF082N65S3F

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, FRFET<SUP>®</SUP>, 650 V, 40 A, 82 MΩ, TO-220F

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Search across all available documentation for this part.

DocumentsDatasheetPackage Drawing-221D-03-TO-220 3-LEAD FULLPAK+3
Thyristor TRIAC 4A = 5 mA 125 °C (Max) 600 V TO-220FPAB
Discrete Semiconductor Products

NTPF082N65S3F

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, FRFET<SUP>®</SUP>, 650 V, 40 A, 82 MΩ, TO-220F

Deep-Dive with AI

DocumentsDatasheetPackage Drawing-221D-03-TO-220 3-LEAD FULLPAK+3

Technical Specifications

Parameters and characteristics for this part

SpecificationNTPF082N65S3F
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]70 nC
Input Capacitance (Ciss) (Max) @ Vds3240 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)48 W
Rds On (Max) @ Id, Vgs82 mOhm
Supplier Device PackageTO-220F-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.84
10$ 3.98
100$ 3.57
NewarkEach 1$ 6.84
10$ 6.56
25$ 6.32
ON SemiconductorN/A 1$ 3.29

Description

General part information

NTPF082N65S3F Series

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.