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8 POWER TDFN
Discrete Semiconductor Products

NTMFS0D6N04XMT1G

Active
ON Semiconductor

POWER MOSFET, SINGLE, N-CHANNEL, 40V, 0.57MΩ, 380A, SO8-FL 5X6

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8 POWER TDFN
Discrete Semiconductor Products

NTMFS0D6N04XMT1G

Active
ON Semiconductor

POWER MOSFET, SINGLE, N-CHANNEL, 40V, 0.57MΩ, 380A, SO8-FL 5X6

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMFS0D6N04XMT1G
Current - Continuous Drain (Id) @ 25°C380 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]86.4 nC
Input Capacitance (Ciss) (Max) @ Vds5574 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)150 W
Rds On (Max) @ Id, Vgs0.57 mOhm
Supplier Device Package8-DFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.92
10$ 1.90
100$ 1.31
500$ 1.06
Digi-Reel® 1$ 2.92
10$ 1.90
100$ 1.31
500$ 1.06
Tape & Reel (TR) 1500$ 0.94
3000$ 0.91
NewarkEach (Supplied on Cut Tape) 1$ 2.79
ON SemiconductorN/A 1$ 0.97

Description

General part information

NTMFS0D6N04XM Series

The latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.

Documents

Technical documentation and resources