Specification	SBE001-TL-W

Capacitance @ Vr, F	70 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOT-23-6
Reverse Recovery Time (trr)	20 ns
Speed	200 mA, 500 ns
Supplier Device Package	6-CPH
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	550 mV

SBE001 Series

Schottky Barrier Diode, 30V, 2A, Low IR, Single CPH6

Part	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Average Rectified (Io)	Package / Case	Speed	Technology
ON Semiconductor SBE001-TL-W	6-CPH	100 µA	-55 °C	125 °C	30 V	70 pF	20 ns	550 mV	Surface Mount	2 A	SOT-23-6	200 mA 500 ns	Schottky

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

SBE001 is Schottky Barrier Diode, 30V, 2A, Low IR, Single CPH6 for High frequency rectification.