Discrete Semiconductor Products
R6009KNXC7G
ActiveRohm Semiconductor
600V 9A TO-220FM, HIGH-SPEED SWITCHING POWER MOSFET
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
R6009KNXC7G
ActiveRohm Semiconductor
600V 9A TO-220FM, HIGH-SPEED SWITCHING POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | R6009KNXC7G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 16.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 540 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 48 W |
| Rds On (Max) @ Id, Vgs | 535 mOhm |
| Supplier Device Package | TO-220FM |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
R6009KNX Series
R6009KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
Documents
Technical documentation and resources