Discrete Semiconductor Products

RJK1052DPB-00#J5

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MOSFETS JET SERIES MOSFET, 100V, LFPAK, PB-F, HF

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Discrete Semiconductor Products

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MOSFETS JET SERIES MOSFET, 100V, LFPAK, PB-F, HF

Technical Specifications

Parameters and characteristics for this part

Specification	RJK1052DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4160 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	55 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 100V 20A 20mohm LFPAK56

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Operating Temperature	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation RJK1052DPB-00#J5	N-Channel	4.5 V 10 V	29 nC	20 mOhm	55 W	MOSFET (Metal Oxide)	SC-100 SOT-669	20 V	100 V	4160 pF	LFPAK	150 °C	Surface Mount	20 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources