Discrete Semiconductor Products

HUFA75645S3S

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TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,75A I(D),TO-263AB ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,75A I(D),TO-263AB ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	HUFA75645S3S

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	238 nC
Input Capacitance (Ciss) (Max) @ Vds	3790 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	310 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

N-Channel UltraFET Power MOSFET 100V, 75A, 14mΩ

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor HUFA75645S3S	20 V	14 mOhm	3790 pF	310 W	TO-263 (D2PAK)	4 V	10 V	238 nC	N-Channel	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 V	Surface Mount	MOSFET (Metal Oxide)	75 A

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General part information

N-Channel UltraFET Power MOSFET 100 V, 75 A, 14 mΩ

Technical documentation and resources