Discrete Semiconductor Products

2SK3824

Obsolete

MOSFET N-CH 60V 60A TO220

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 60A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3824

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3500 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	60 W, 1.75 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	FET Type
ON Semiconductor 2SK3824	Through Hole	60 A	MOSFET (Metal Oxide)	150 °C	TO-220-3	2.6 V	4 V	10 V	3500 pF	20 V	60 V	TO-220	15 mOhm	1.75 W 60 W	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 60A (Ta) 1.75W (Ta), 60W (Tc) Through Hole TO-220

Technical documentation and resources