VS-SD453N25S20PC

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DIODE GEN PURP 2.5KV 400A B-8

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Discrete Semiconductor Products

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DIODE GEN PURP 2.5KV 400A B-8

Technical Specifications

Parameters and characteristics for this part

Specification	VS-SD453N25S20PC

Current - Average Rectified (Io)	400 A
Current - Reverse Leakage @ Vr	50 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	B-8
Reverse Recovery Time (trr)	2 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	B-8
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	2500 V
Voltage - Forward (Vf) (Max) @ If	2.2 V

Part	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Package / Case	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division SD453N16S20PC	Standard	150 °C	-40 °C	400 A	2 µs	Chassis Stud Mount	50 mA	2.2 V	B-8	B-8	Standard Recovery >500ns	200 mA
Vishay General Semiconductor - Diodes Division VS-SD453N25S20PC	Standard	150 °C	-40 °C	400 A	2 µs	Chassis Stud Mount	50 mA	2.2 V	B-8	B-8	Standard Recovery >500ns	200 mA	2500 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 2500 V 400A Chassis, Stud Mount B-8

Technical documentation and resources