Discrete Semiconductor Products

SIB456DK-T1-GE3

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MOSFET N-CH 100V 6.3A PPAK SC75

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Discrete Semiconductor Products

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MOSFET N-CH 100V 6.3A PPAK SC75

Technical Specifications

Parameters and characteristics for this part

Specification	SIB456DK-T1-GE3

Current - Continuous Drain (Id) @ 25°C	6.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5 nC
Input Capacitance (Ciss) (Max) @ Vds	130 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-75-6
Power Dissipation (Max)	13 W, 2.4 W
Rds On (Max) @ Id, Vgs	185 mOhm
Supplier Device Package	PowerPAK® SC-75-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type
Vishay General Semiconductor - Diodes Division SIB456DK-T1-GE3	MOSFET (Metal Oxide)	6.3 A	185 mOhm	N-Channel	5 nC	-55 °C	150 °C	PowerPAK® SC-75-6	130 pF	20 V	4.5 V 10 V	2.4 W 13 W	3 V	100 V	PowerPAK® SC-75-6	Surface Mount

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General part information

N-Channel 100 V 6.3A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6

Technical documentation and resources