Specification	RURG3060CC

Current - Average Rectified (Io) (per Diode)	30 A
Current - Reverse Leakage @ Vr	250 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	60 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247-3
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.5 V

RURG3060_F085 Series

600V, 30A, 1.26V, TO-247 (2-lead)<BR>Ultrafast Rectifier

Part	Package / Case	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Supplier Device Package	Mounting Type	Diode Configuration	Reverse Recovery Time (trr)	Speed	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Grade	Qualification	Current - Average Rectified (Io)
ON Semiconductor RURG3060CC	TO-247-3	250 µA	600 V	Avalanche	TO-247-3	Through Hole	1 Pair Common Cathode	60 ns	200 mA 500 ns	30 A	1.5 V	175 ░C	-65 C
ON Semiconductor RURG3060-F085	TO-247-2	250 µA	600 V	Avalanche	TO-247-2	Through Hole		80 ns	200 mA 500 ns		1.5 V	175 ░C	-55 C	Automotive	AEC-Q101	30 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	450	$ 2.36

Description

General part information

RURG3060_F085 Series

The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr< 80ns). It has low forwardvoltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching powersupplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recoverycharacteristic minimizes ringing and electrical noise in many power switching circuits, thus reducing power lossin the switching transistors.