Discrete Semiconductor Products

SQ2348ES-T1_BE3

Obsolete

MOSFET N-CH 30V 8A SOT23-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 8A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SQ2348ES-T1_BE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Grade	Technology	Qualification	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SQ2348ES-T1_BE3	Surface Mount	SOT-23-3 (TO-236)	-55 °C	175 ░C	4.5 V 10 V	SC-59 SOT-23-3 TO-236-3	14.5 nC	Automotive	MOSFET (Metal Oxide)	AEC-Q101	30 V	540 pF	2.5 V	20 V	24 mOhm	8 A	N-Channel	3 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 8A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources