Discrete Semiconductor Products

HUF76439S3ST

Active

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,75A I(D),TO-263AB ROHS COMPLIANT: YES

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,75A I(D),TO-263AB ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	HUF76439S3ST

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	84 nC
Input Capacitance (Ciss) (Max) @ Vds	2745 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3 V

N-Channel Logic Level UltraFET Power MOSFET 60V, 71A, 14mΩ

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor HUF76439S3ST	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2745 pF	3 V	16 V	TO-263 (D2PAK)	-55 °C	175 ░C	N-Channel	4.5 V 10 V	Surface Mount	180 W	MOSFET (Metal Oxide)	12 mOhm	60 V	84 nC	75 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel Logic Level UltraFET Power MOSFET 60 V, 71 A, 14 mΩ

Technical documentation and resources