Discrete Semiconductor Products
NTLJS4149PTBG
ObsoleteON Semiconductor
POWER MOSFET 30V 5.9A 62 MOHM SINGLE P-CHANNEL WDFN6
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Discrete Semiconductor Products
NTLJS4149PTBG
ObsoleteON Semiconductor
POWER MOSFET 30V 5.9A 62 MOHM SINGLE P-CHANNEL WDFN6
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NTLJS4149PTBG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.7 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Power Dissipation (Max) | 700 mW |
| Rds On (Max) @ Id, Vgs [Max] | 62 mOhm |
| Supplier Device Package | 6-WDFN (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NTLJS4149P Series
NTLJS4149P, -30V, -5.9A, µCool™, Single P-Channel, 2x2 mm, WDFN Package
Documents
Technical documentation and resources