Specification	MC14569BDWG

Count Rate	13 MHz
Logic Type	Divide-by-N
Mounting Type	Surface Mount
Number of Bits per Element	4
Number of Elements	2
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-55 °C
Package / Case	16-SOIC
Package / Case [x]	0.295 in
Package / Case [y]	7.5 mm
Reset	Asynchronous
Supplier Device Package	16-SOIC
Trigger Type	Positive Edge
Voltage - Supply [Max]	18 V
Voltage - Supply [Min]	3 V

MC14569B Series

Programmable Divide-By-N Dual 4-Bit Binary/BCD Down Counter

Part	Reset	Number of Elements	Package / Case [x]	Package / Case	Package / Case [y]	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Number of Bits per Element	Trigger Type	Count Rate	Grade	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Logic Type	Supplier Device Package	Package / Case	Package / Case
ON Semiconductor NLV14569BDWR2G	Asynchronous	2	0.295 in	16-SOIC	7.5 mm	Surface Mount	18 V	3 V	4	Positive Edge	13 MHz	Automotive	AEC-Q100	-55 °C	125 °C	Divide-by-N	16-SOIC
ON Semiconductor MC14569BDW	Asynchronous	2	0.295 in	16-SOIC	7.5 mm	Surface Mount	18 V	3 V	4	Positive Edge	13 MHz			-55 °C	125 °C	Divide-by-N	16-SOIC
ON Semiconductor MC14569BCPG	Asynchronous	2		16-DIP		Through Hole	18 V	3 V	4	Positive Edge	13 MHz			-55 °C	125 °C	Divide-by-N	16-PDIP	0.3 in	7.62 mm
ON Semiconductor MC14569BDWG	Asynchronous	2	0.295 in	16-SOIC	7.5 mm	Surface Mount	18 V	3 V	4	Positive Edge	13 MHz			-55 °C	125 °C	Divide-by-N	16-SOIC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MC14569B Series

The MC14569B is a programmable divide-by-N dual 4-bit binary or BCD down counter constructed with MOS P-channel and N-channel enhancement mode devices (complementary MOS) in a monolithic structure.This device has been designed for use with the MC14568B phase comparator/counter in frequency synthesizers, phase-locked loops, and other frequency division applications requiring low power dissipation and/or high noise immunity.