Specification	NVTFS002N04CTAG

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	3.2 W, 85 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

NVTFS002N04C Series

Power MOSFET, 40 V, 2.4 mOhms, 136 A, Single N-Channel

Part	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology
ON Semiconductor NVTFS002N04CTAG	20 V	8-PowerWDFN	2250 pF	AEC-Q101	40 V	-55 °C	175 ░C	Automotive	3.5 V	N-Channel	3.2 W 85 W	Surface Mount	2.4 mOhm	34 nC	8-WDFN (3.3x3.3)	10 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.20
		10	$ 2.08
		100	$ 1.45
		500	$ 1.17
	Digi-Reel®	1	$ 3.20
		10	$ 2.08
		100	$ 1.45
		500	$ 1.17
	Tape & Reel (TR)	1500	$ 1.04
		3000	$ 1.03
Newark	Each	1000	$ 1.37
		2500	$ 1.11
		10000	$ 1.08
ON Semiconductor	N/A	1	$ 0.95

Description

General part information

NVTFS002N04C Series

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.