Discrete Semiconductor Products

NTQS6463R2

Obsolete

POWER MOSFET -20 V, -6.8 A, P-CHANNEL TSSOP-8

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Discrete Semiconductor Products

Obsolete

POWER MOSFET -20 V, -6.8 A, P-CHANNEL TSSOP-8

Technical Specifications

Parameters and characteristics for this part

Specification	NTQS6463R2

Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power Dissipation (Max) [Max]	930 mW
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	900 mV

Power MOSFET -20 V, -6.8 A, P-Channel TSSOP-8

Part	Power Dissipation (Max) [Max]	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [custom]	Package / Case [custom]	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Technology
ON Semiconductor NTQS6463R2	930 mW	P-Channel	900 mV	2.5 V 4.5 V	12 V	50 nC	20 mOhm	-55 °C	150 °C	8-TSSOP	0.173 "	4.4 mm	20 V	8-TSSOP	Surface Mount	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET -20 V, -6.8 A, P-Channel TSSOP-8

Technical documentation and resources