Specification	FQPF5N50CYDTU

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	625 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Formed Leads
Power Dissipation (Max)	38 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQPF5P20RDTU Series

Power MOSFET, P-Channel, QFET<sup>®</sup>, -200 V, -3.4 A, 1.4 Ω, TO-220F

Part	Technology	FET Type	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25C	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]
ON Semiconductor FQPF5N80	MOSFET (Metal Oxide)	N-Channel	30 V	TO-220-3 Full Pack	800 V	5 V	2.8 A	TO-220F-3	1250 pF	10 V	47 W	2.6 Ohm	-55 °C	150 °C	Through Hole
ON Semiconductor FQPF5N50CYDTU	MOSFET (Metal Oxide)	N-Channel		TO-220-3 Full Pack Formed Leads	500 V	4 V		TO-220F-3	625 pF	10 V	38 W	1.4 Ohm	-55 °C	150 °C	Through Hole	24 nC	5 A	30 V
ON Semiconductor FQPF5N50	MOSFET (Metal Oxide)	N-Channel	30 V	TO-220-3 Full Pack	500 V	5 V	3 A	TO-220F-3		10 V	39 W		-55 °C	150 °C	Through Hole				610 pF	17 nC	1.8 Ohm
ON Semiconductor FQPF55N10	MOSFET (Metal Oxide)	N-Channel	25 V	TO-220-3 Full Pack	100 V	4 V	34.2 A	TO-220F-3		10 V	60 W	26 mOhm	-55 °C	175 ░C	Through Hole					98 nC
ON Semiconductor FQPF50N06	MOSFET (Metal Oxide)	N-Channel	25 V	TO-220-3 Full Pack	60 V	4 V	31 A	TO-220F-3	1540 pF	10 V	47 W		-55 °C	175 ░C	Through Hole	41 nC					22 mOhm
ON Semiconductor FQPF5N60CYDTU	MOSFET (Metal Oxide)	N-Channel	30 V	TO-220-3 Full Pack Formed Leads	600 V	4 V	4.5 A	TO-220F-3		10 V			-55 °C	150 °C	Through Hole				670 pF	19 nC	2.5 Ohm	33 W
ON Semiconductor FQPF5N50CFTU	MOSFET (Metal Oxide)	N-Channel	30 V	TO-220-3 Full Pack	500 V	4 V	5 A	TO-220F-3	625 pF	10 V	38 W	1.55 Ohm	-55 °C	150 °C	Through Hole	24 nC
ON Semiconductor FQPF5N60CYDTU	MOSFET (Metal Oxide)	N-Channel	30 V	TO-220-3 Full Pack Formed Leads	600 V	4 V	4.5 A	TO-220F-3		10 V			-55 °C	150 °C	Through Hole				670 pF	19 nC	2.5 Ohm	33 W
ON Semiconductor FQPF5P20	MOSFET (Metal Oxide)	P-Channel	30 V	TO-220-3 Full Pack	200 V	5 V	3.4 A	TO-220F-3	430 pF	10 V	38 W	1.4 Ohm	-55 °C	150 °C	Through Hole	13 nC
ON Semiconductor FQPF5P10	MOSFET (Metal Oxide)	P-Channel	30 V	TO-220-3 Full Pack	100 V	4 V	2.9 A	TO-220F-3	250 pF	10 V	23 W	1.05 Ohm	-55 °C	175 ░C	Through Hole					8.2 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	390	$ 0.77
		390	$ 0.77

Description

General part information

FQPF5P20RDTU Series

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.