Specification	SSM3J65CTC,L3F

Current - Continuous Drain (Id) @ 25°C	700 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	48 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	CST3C
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

SSM3J65 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -0.7 A, 0.5 Ω@4.5V, CST3C

Part	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Technology	Supplier Device Package	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Toshiba Semiconductor and Storage SSM3J65CTC,L3F	10 V	Surface Mount	20 V	SC-101 SOT-883	700 mA	150 °C	MOSFET (Metal Oxide)	CST3C	500 mW	P-Channel	1 V	500 mOhm	48 pF	1.2 V	4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -0.7 A, 0.5 Ω@4.5V, CST3C

Technical documentation and resources