
DRV8436PEVM
ActiveDRV8436P PWM MOTOR DRIVER EVALUA
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DRV8436PEVM
ActiveDRV8436P PWM MOTOR DRIVER EVALUA
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Technical Specifications
Parameters and characteristics for this part
| Specification | DRV8436PEVM |
|---|---|
| Embedded | Yes, MCU |
| Primary Attributes | Motors (Stepper) |
| Secondary Attributes | Graphical User Interface (GUI), USB Interface(s) |
| Supplied Contents | Board(s) |
| Type | Power Management |
| Utilized IC / Part | DRV8436P |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Box | 1 | $ 90.00 | |
Description
General part information
DRV8436E Series
The DRV8436E/P devices are dual H-bridge motor drivers for a wide variety of industrial applications. The devices can be used for driving two DC motors, or a bipolar stepper motor. The output stage of the driver consists of N-channel power MOSFETs configured as two full H-bridges, charge pump regulator, current sensing and regulation, and protection circuitry. The integrated current sensing uses an internal current mirror architecture, removing the need for a large power shunt resistor, saving board area and reducing system cost. A low-power sleep mode is provided to achieve ultra- low quiescent current draw by shutting down most of the internal circuitry. Internal protection features are provided for supply undervoltage lockout (UVLO), charge pump undervoltage (CPUV), output overcurrent (OCP), and device overtemperature (OTSD). The DRV8436E/P is capable of driving up to 1.5-A full scale or 1.1-A rms output current per H-bridge (dependent on PCB design).
The DRV8436E/P devices are dual H-bridge motor drivers for a wide variety of industrial applications. The devices can be used for driving two DC motors, or a bipolar stepper motor. The output stage of the driver consists of N-channel power MOSFETs configured as two full H-bridges, charge pump regulator, current sensing and regulation, and protection circuitry. The integrated current sensing uses an internal current mirror architecture, removing the need for a large power shunt resistor, saving board area and reducing system cost. A low-power sleep mode is provided to achieve ultra- low quiescent current draw by shutting down most of the internal circuitry. Internal protection features are provided for supply undervoltage lockout (UVLO), charge pump undervoltage (CPUV), output overcurrent (OCP), and device overtemperature (OTSD). The DRV8436E/P is capable of driving up to 1.5-A full scale or 1.1-A rms output current per H-bridge (dependent on PCB design).
Documents
Technical documentation and resources