Discrete Semiconductor Products

RJL5020DPK-00#T0

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MOSFET N-CH 500V 38A TO3P

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Discrete Semiconductor Products

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MOSFET N-CH 500V 38A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	RJL5020DPK-00#T0

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Input Capacitance (Ciss) (Max) @ Vds	4750 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	135 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Vgs (Max)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation RJL5020DPK-00#T0	30 V	150 °C	38 A	140 nC	10 V	TO-3P	Through Hole	MOSFET (Metal Oxide)	4750 pF	200 W	SC-65-3 TO-3P-3	N-Channel	135 mOhm	500 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 38A (Ta) 200W (Tc) Through Hole TO-3P

Technical documentation and resources