Discrete Semiconductor Products

2SK3575-AZ

Obsolete

2SK3575 - SWITCHING N-CHANNEL PO

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Discrete Semiconductor Products

Obsolete

2SK3575 - SWITCHING N-CHANNEL PO

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3575-AZ

Current - Continuous Drain (Id) @ 25°C	83 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	70 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3700 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	1.5 W, 105 W
Rds On (Max) @ Id, Vgs [Max]	4.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Switching N-Channel Power Mosfet

Part	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Operating Temperature	FET Type	Supplier Device Package	Vgs (Max)
Renesas Electronics Corporation 2SK3575-AZ	30 V	MOSFET (Metal Oxide)	83 A	TO-220-3	4.5 mOhm	3700 pF	70 nC	2.5 V	4.5 V 10 V	Through Hole	1.5 W 105 W	150 °C	N-Channel	TO-220AB	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	824	$ 2.71

General part information

The 2SK3575 is a Switching N-Channel Power Mosfet.

Technical documentation and resources