Discrete Semiconductor Products

FDD044AN03L

Obsolete

MOSFET N-CH 30V 21A/35A TO252AA

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 21A/35A TO252AA

Technical Specifications

Parameters and characteristics for this part

Specification	FDD044AN03L

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	118 nC
Input Capacitance (Ciss) (Max) @ Vds	5160 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs
ON Semiconductor FDD044AN03L	MOSFET (Metal Oxide)	5160 pF	TO-252AA	N-Channel	4.5 V 10 V	-55 °C	175 ░C	118 nC	2.5 V	Surface Mount	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	3.9 mOhm
ON Semiconductor FDD044AN03L	MOSFET (Metal Oxide)	5160 pF	TO-252 (DPAK)	N-Channel	4.5 V 10 V	-55 °C	175 ░C	118 nC	2.5 V	Surface Mount	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	3.9 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 21A (Ta), 35A (Tc) 160W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources