Discrete Semiconductor Products

PSMN1R0-40ULDX

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MOSFET N-CH 40V 280A LFPAK56

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Discrete Semiconductor Products

Active

MOSFET N-CH 40V 280A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN1R0-40ULDX

Current - Continuous Drain (Id) @ 25°C	280 A
Drain to Source Voltage (Vdss)	40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	127 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	164 W
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Power Dissipation (Max)	Package / Case	Mounting Type	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type
Freescale Semiconductor - NXP PSMN1R0-40ULDX	164 W	SOT-1023 4-LFPAK	Surface Mount	150 °C	280 A	40 V	20 V	LFPAK56 Power-SO8	127 nC	MOSFET (Metal Oxide)	N-Channel

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General part information

N-Channel 40 V 280A (Tc) 164W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources