Discrete Semiconductor Products

SI7115DN-T1-E3

LTB

MOSFET P-CH 150V 8.9A PPAK1212-8

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Discrete Semiconductor Products

LTB

MOSFET P-CH 150V 8.9A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7115DN-T1-E3

Current - Continuous Drain (Id) @ 25°C	8.9 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	1190 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	52 W
Rds On (Max) @ Id, Vgs	295 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]
Vishay General Semiconductor - Diodes Division SI7115DN-T1-E3	MOSFET (Metal Oxide)	PowerPAK® 1212-8	Surface Mount	6 V 10 V	150 V	52 W	1190 pF	4 V	8.9 A	295 mOhm	PowerPAK® 1212-8	20 V	P-Channel	42 nC	150 °C	-50 °C

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General part information

P-Channel 150 V 8.9A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources