NDH8321C

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MOSFET N/P-CH 20V 3.8A SUPERSOT

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Discrete Semiconductor Products

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MOSFET N/P-CH 20V 3.8A SUPERSOT

Technical Specifications

Parameters and characteristics for this part

Specification	NDH8321C

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3.8 A, 2.7 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	23 nC
Gate Charge (Qg) (Max) @ Vgs	28 nC
Input Capacitance (Ciss) (Max) @ Vds	865 pF, 700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSOP
Package / Case	0.13 in
Package / Case [y]	3.3 mm
Power - Max [Max]	800 mW
Supplier Device Package	SuperSOT™-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case [y]	Package / Case	Package / Case	Configuration
ON Semiconductor NDH8321C	23 nC	28 nC	Surface Mount	20 V	700 pF 865 pF	MOSFET (Metal Oxide)	SuperSOT™-8	1 V	-55 °C	150 °C	800 mW	2.7 A 3.8 A	3.3 mm	8-TSOP	0.13 in	N and P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	417	$ 0.72

General part information

Mosfet Array 20V 3.8A (Ta), 2.7A (Ta) 800mW (Ta) Surface Mount SuperSOT™-8

Technical documentation and resources

No documents available