Discrete Semiconductor Products

TSM05N03CW RPG

Obsolete

MOSFETS 30V, 5A, SINGLE N-CHANNEL POWER MOSFET

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Discrete Semiconductor Products

Obsolete

MOSFETS 30V, 5A, SINGLE N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	TSM05N03CW RPG

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7 nC
Input Capacitance (Ciss) (Max) @ Vds	555 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	3 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Drain to Source Voltage (Vdss)	Technology	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Mounting Type
Taiwan Semiconductor Corporation TSM05N03CW RPG	30 V	MOSFET (Metal Oxide)	TO-261-4 TO-261AA	3 V	20 V	555 pF	150 °C	-55 °C	7 nC	3 W	5 A	60 mOhm	4.5 V 10 V	N-Channel	SOT-223	Surface Mount

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General part information

N-Channel 30 V 5A (Ta) 3W (Ta) Surface Mount SOT-223

Technical documentation and resources

No documents available