Discrete Semiconductor Products

IXTT6N120

Active

DISCMOSFET N-CH STD-HIVOLTAGE TO-268AA/ TUBE

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DISCMOSFET N-CH STD-HIVOLTAGE TO-268AA/ TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IXTT6N120

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	1950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs [Max]	2.6 Ohm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology
Littelfuse/Commercial Vehicle Products IXTT6N120	20 V	N-Channel	2.6 Ohm	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	5 V	10 V	300 W	6 A	TO-268AA	1200 V	-55 °C	150 °C	56 nC	Surface Mount	1950 pF	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1200 V 6A (Tc) 300W (Tc) Surface Mount TO-268AA

Technical documentation and resources