Discrete Semiconductor Products
FDC3512
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 80 V, 3 A, 0.056 OHM, SUPERSOT, SURFACE MOUNT
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Discrete Semiconductor Products
FDC3512
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 80 V, 3 A, 0.056 OHM, SUPERSOT, SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDC3512 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 18 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 634 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Supplier Device Package | SuperSOT™-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
FDC3512 Series
The FDC3512 is a N-channel MOSFET produced using PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
Documents
Technical documentation and resources