Specification	FDBL86063-F085AW

Current - Continuous Drain (Id) @ 25°C	240 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	5120 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSFN
Power Dissipation (Max)	357 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.6 mOhm
Supplier Device Package	8-HPSOF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDBL86063_F085 Series

N-Channel PowerTrench® MOSFET, 100V, 240A, 2.6mΩ

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Grade	Qualification
ON Semiconductor FDBL86063_F085	100 V	-55 °C	175 ░C	357 W	5120 pF	95 nC	240 A	8-HPSOF	8-PowerSFN	N-Channel	20 V	10 V	Surface Mount	4 V	MOSFET (Metal Oxide)	2.6 mOhm
ON Semiconductor FDBL86063-F085	100 V	-55 °C	175 ░C	357 W	5120 pF	95 nC	240 A	8-HPSOF	8-PowerSFN	N-Channel	20 V	10 V	Surface Mount	4 V	MOSFET (Metal Oxide)	2.6 mOhm
ON Semiconductor FDBL86063-F085AW	100 V	-55 °C	175 ░C	357 W	5120 pF	95 nC	240 A	8-HPSOF	8-PowerSFN	N-Channel	20 V	10 V	Surface Mount	4 V	MOSFET (Metal Oxide)	2.6 mOhm	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDBL86063_F085 Series

Automotive Power MOSFET in a TOLL package for efficient designs with high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.