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D2PAK-7
Discrete Semiconductor Products

NVBG1000N170M1

Active
ON Semiconductor

SILICON CARBIDE (SIC) MOSFET – ELITESIC, 960 MOHM, 1700 V, M1, D2PAK-7L

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D2PAK-7
Discrete Semiconductor Products

NVBG1000N170M1

Active
ON Semiconductor

SILICON CARBIDE (SIC) MOSFET – ELITESIC, 960 MOHM, 1700 V, M1, D2PAK-7L

Technical Specifications

Parameters and characteristics for this part

SpecificationNVBG1000N170M1
Current - Continuous Drain (Id) @ 25°C4.3 A
Drain to Source Voltage (Vdss)1700 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]14 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]150 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)51 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs1.43 Ohm
Supplier Device PackageD2PAK-7
TechnologySiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]25 V
Vgs (Max) [Min]-15 V
Vgs(th) (Max) @ Id4.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.05
10$ 5.47
25$ 5.21
100$ 4.53
250$ 4.32
Digi-Reel® 1$ 6.05
10$ 5.47
25$ 5.21
100$ 4.53
250$ 4.32
Tape & Reel (TR) 800$ 3.94
1600$ 3.43
2400$ 3.31
NewarkEach (Supplied on Full Reel) 500$ 4.61
1000$ 4.34

Description

General part information

NVBG1000N170M1 Series

The new family of 1700V M1 planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive.